New tech improves energy-efficient data storage in phase-change memory
Researchers at Stanford have devised a new material technology that they claim is an improvement in phase-change memory (PCM) for energy-efficient data storage and computing.
This new material–GST467, employs a combination of materials in a superlattice structure, achieving record-low power density, low switching voltage, and small dimensions (40 nanometers). The memory cells offer multiple resistance states, good endurance, and fast switching.
Furthermore, the study shows that heat management and high crystallization temperature contribute to stable and rapid memory operations, making PCM a frontrunner for energy-efficient computing.
Improving various metrics
A statement by Stanford University says that the technology is a type of nonvolatile memory that relies on switching between high and low resistance states to store computer data, calling it an “improved option for future AI and data-centric systems.”
“We are not just improving on a single metric, such as endurance or speed; we are improving several metrics simultaneously,” stated Eric Pop, the Pease-Ye Professor of Electrical Engineering and professor, by courtesy, of materials science and engineering at Stanford.
“This is the most realistic, industry-friendly thing we’ve built in this sphere. I’d like to consider it a step towards a universal memory.”
The material functions are fast, low-power, stable, long-lasting, and can be fabricated at temperatures compatible with commercial manufacturing.
The researchers sandwiched the alloy between several nanometer-thin materials in a superlattice structure, achieving good nonvolatile memory results. This superlattice structure allows low switching energy, good endurance, stability, and nonvolatility.
“It takes a lot of energy to shuttle data back and forth, especially with today’s computing workloads,” said Xiangjin Wu, co-lead author of the paper and a doctoral candidate. “With this type of memory, we’re really hoping to bring the memory and processing closer together, ultimately into one device, so that it uses less energy and time.”
The material operates below 1 volt, which is desirable for low-power technology and significantly faster than a typical solid-state drive.
The researchers have shrunk the memory cells down to 40 nanometers in diameter. As per the researchers ‘ statement, they are exploring ways to increase density by stacking the memory in vertical layers, enabled by the superlattice’s low fabrication temperature.
“A few other types of nonvolatile memory can be a bit faster, but they operate at higher voltage or higher power,” noted Eric Pop, the Pease-Ye Professor of Electrical Engineering and materials science and engineering professor at Stanford.
“With all these computing technologies, there are tradeoffs between speed and energy. The fact that we’re switching at a few tens of nanoseconds while operating below one volt is a big deal.”
“The fabrication temperature is well below what you need,” Pop added. “People are talking about stacking memory in thousands of layers to increase density. This type of memory can enable such future 3D layering.”
Source: Interesting Engineering
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New tech improves energy-efficient data storage in phase-change memory